机译:用于0.35μmSiGe BiCMOS工艺中的ESD保护的低压触发SCR
Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrate Device, Chengdu, Peoples R China;
Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrate Device, Chengdu, Peoples R China;
Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrate Device, Chengdu, Peoples R China;
Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrate Device, Chengdu, Peoples R China;
Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrate Device, Chengdu, Peoples R China;
Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrate Device, Chengdu, Peoples R China;
Heterojunction bipolar transistor (HBT); Silicon Controlled Rectifier (SCR); Electrostatic discharge (ESD); Trigger voltage;
机译:0.18- / splμm/ m SiGe BiCMOS工艺中用于ESD保护设计的低泄漏深沟道二极管的特性
机译:低压BiCMOS工艺中的耐高压片上ESD保护
机译:本机NMOS触发的SCR具有更快的开启速度,可在0.13 / spl mu / m CMOS工艺中提供有效的ESD保护
机译:用于0.35um SiGe BiCMOS工艺中的ESD保护的低压触发SCR
机译:在BICMOS过程中制造的SiGe APDS的设计,布局和测试
机译:使用隧道FET中的SiGe源/漏区提高ESD保护的鲁棒性
机译:使用0.35μmSiGe BiCMOS技术的可调谐多频带差分LC VCO设计用于多标准无线通信系统