β-Ga2O3 solar-blind deep-ultraviolet photodetector based on annealed sapphire substrate

摘要

β-Ga2O3 solar-blind deep-ultraviolet photodetectors were fabricated based on as-supplied and annealed c-plane sapphire substrates. It was found the β-Ga2O3 epitaxial film exhibited better crystalline quality, and accordingly the fabricated device performed significantly improved characteristics, for example, higher responsibility (153 AAV), by adopting annealed sapphire substrate. However, the degradations in dark current and response time were also observed on the photodetector based on annealed sapphire substrate, possibly attributed to higher carrier mobility and longer carrier lifetime in β-Ga2O3 epitaxial film respectively.