Method for manufacturing ultraviolet photodetector based on Ga2O3 material

摘要

A method for manufacturing an ultraviolet photodetector based on Ga₂O₃ material are provided. The method includes: selecting a substrate; forming a Ga₂O₃ layer on an upper surface of the substrate; forming a top electrode on the Ga₂O₃ layer; and forming a bottom electrode on a lower surface of the substrate. Ga₂O₃ material is adopted, with a light transmittance in the solar blind area can reach 80% or even 90%. The Ga₂O₃ material is suitable for application to a light absorbing layer, and its transparent conductive electrical properties are also beneficial to improve the light absorption capacity of the light absorbing layer, thereby greatly improving the device performance of the photodetector diode.