High-Performance Deep Ultraviolet Photodetector Based on NiO/β-Ga2O3 Heterojunction

摘要

XRD patterns of the β-Ga O film deposited on sapphire substrate (0001) plane, and the peaks of sapphire substrate are marked as asterisks (*). UV-Vis absorption spectra of the β-Ga O film. Plots of [α ( )] versus photon energy. TEM and HRTEM images of the β-Ga O film after annealing. AFM images of the β-Ga O film. Optical and AFM images at the step edge between the film and substrate