Device layout effect of strained Ge-based NMOSFETs with Ge1−xSix stressors

摘要

In this study, the stress components of device with Ge-Based and Ge1-xSix S/D stressors for NMOSFETs have been simulated by TCAD. On the other hand, the mobility was derived according with the relationship between channel stresses and Piezoresistive theory. The relation between gate width, STI length, and dummy OD length will be discussed. The simulation shows the devices with narrow gate width, longer O/D length, and short STI length would have higher carrier mobility gain.