Comparative Analysis of Program/Read Disturb Robustness for GeSbTe-Based Phase-Change Memory Devices

摘要

We propose a comparative analysis for Ge2Sb2Te5 (GST) and Ge-rich GST based Phase-Change Memory (PCM) devices in terms of program/read disturbs robustness. We present the characterization of the intrinsic drift of the materials, the investigation of the devices response to electrical stress and, finally, the study of the PCM cell behavior in extreme disturb conditions. A higher immunity for Ge-rich GST is verified as well as the importance of high-resistance drift as inhibitor for sub-threshold switching phenomenon.