aluminium compounds; epitaxial growth; lanthanum compounds; nickel compounds; optical conductivity; permittivity; praseodymium compounds; pulsed laser deposition; semiconductor epitaxial layers; strontium compounds; tantalum compounds; terahertz materials; terahertz spectroscopy; (LaAlOsub3/sub)sub0.3/sub(Srsub2/subTaAlOsub6/sub)sub0.7/sub:PrNiOsub3/sub; charge dynamics; complex dielectric constant; electron volt energy 0.8 meV to 7 meV; epitaxial praseodymium nickel oxide thin film; insulator-metal transition; pulsed laser deposition method; reentrant I-M transition; size 40 nm; temperature 130 K; temperature 25 K; temperature 5 K to 300 K; terahertz optical conductivity spectra; terahertz time domain transmission spectroscopy; Charge carrier processes; Conductivity; Epitaxial growth; Optical films; Substrates; X-ray scattering;
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