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Terahertz conductivity across the insulator-metal transition of epitaxial Praseodymium Nickel Oxide thin films

机译:太赫兹电导率穿过外延Pra氧化镍薄膜的绝缘体-金属转变

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Here we report the low energy (0.8-7 meV) charge dynamics probed by Terahertz time domain transmission spectroscopy on 40 nm thick PrNiO (PNO) thin films deposited on the (LaAlO)(SrTaAlO) (LSAT) (110) substrate grown by pulsed laser deposition method. We have experimentally investigated both complex dielectric constant and optical conductivity spectra with respect to temperature ranging from 5 K to 300 K. Terahertz optical conductivity for PNO thin films shows two I-M transitions at 130 K (similar to that of the bulk PNO) and a re-entrant I-M transition around 25 K. The behavior of reentrant I-M transition at 25 K may be due to the presence of PrNiO minor impurity phase.
机译:在这里,我们报告通过太赫兹时域透射光谱在40 nm厚PrNiO(PNO)薄膜上沉积的低能量(0.8-7 meV)电荷动力学,该薄膜沉积在通过脉冲生长的(LaAlO)(SrTaAlO)(LSAT)(110)衬底上激光沉积法。我们已经通过实验研究了相对介电常数谱和相对于5 K到300 K温度范围内的光导率光谱。PNO薄膜的太赫兹光导率显示出在130 K处有两个IM跃迁(类似于块状PNO的跃迁),并且-进入IM过渡在25 K附近。在25 K进入IM过渡的行为可能是由于存在PrNiO微量杂质相。

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