Fabrication and characterization of single crystalline 4H-SiC MEMS devices with n-p-n homoepitaxial structure

摘要

This paper reports single crystalline 4H-SiC MEMS with homoepitaxial n-p-n structure and its resonant characteristics under electrostatic actuation. Single crystalline fully exploits the superior material properties of SiC for operations in harsh environments. Compared to previously report p-n structure, the n-p-n structure makes electrostatic actuation applicable which is essentially important for applications of resonators and actuators to sensor devices. Such n-p-n structure, complementing the p-n structure, also further extends the capability of monolithic integration between SiC MEMS and electronic devices and circuits with not only p-n configurations such as diodes, but also n-p-n configurations such as BJTs and MOSFETs, etc.