Analytical modeling of potential distribution in trigate SOI MOSFETs

摘要

In this paper a new 3-D analytical model for the potential distribution in nano-scaled lightly doped trigate silicon on insulator MOSFETs in the subthreshold regime, is proposed. This model is derived by solving 3-D Poisson's equation and using parabolic potential distribution assumption between lateral gates. The proposed analytic model is investigated and compared with the obtained results from 3-D simulations using ATLAS device simulator. It is demonstrated that analytic solution has a good accuracy to predict potential distribution along the silicon body.