Iterative programming analysis of dopant-segregated multibit/cell Schottky barrier charge-trapping memories

摘要

This work numerically elucidates the effects of dopant-segregated layers on the cell window in multi-bit Schottky barrier charge-trapping cells. Successive injection-trapping iteration analysis was performed to properly study the coupling of trapped charges and Schottky barrier lowering during cell programming. The results showed the dopant-segregated profiles have a key function in determining the programming cell window as well as the physical injection mechanism in multi-bit/cell Schottky barrier charge-trapping cells using the forward and reverse reading scheme.