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Low-leakage and low-power implementation of high-speed 65nm logic gates

机译:高速65nm逻辑门的低漏电和低功耗实现

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In this paper, we propose novel transmission-gate-based (TG-based) AND gates, TG-based OR gates, and pass-transistor logic gates that have new structures and have lower transistor counts than those proposed by other authors. All our proposed gates operate in full swing and have less leakage currents, less dynamic power consumption, and shorter delays than conventional CMOS gates. Compared with the conventional 65nm CMOS gates, our proposed 65nm gates can improve leakage currents, dynamic power consumption, and propagation delays by averages of 29.5%, 15.3%, and 30.3%, respectively. Logic synthesizers can use our proposed gates to facilitate power reduction. The experimental results show that Power Compiler can further reduce the leakage current and dynamic power up to 35.0% and 20.0%, respectively, when the standard cell library used by Power Compiler contains our proposed gates.
机译:在本文中,我们提出了新的传输栅极基(基于TG的)和栅极,TG基或栅极,以及具有新结构的通晶体管逻辑门,并且具有比其他作者提出的晶体管计数更低。我们所有拟议的盖茨都在全面运营,漏电流较小,动态功耗较少,延迟较短,而不是传统的CMOS门。与传统的65nm CMOS门相比,我们提出的65nm栅极可以分别提高漏电流,动态功耗和传播延迟分别为29.5%,15.3%和30.3%的平均值。逻辑合成器可以使用我们提出的栅极来促进减少功率。实验结果表明,当功率编译器使用的标准单元库包含我们所提出的门时,功率编译器分别可以进一步降低漏电流和动态电量高达35.0%和20.0%。

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