Reverse recovery time reworking of fast recovery diodes for industrial production

摘要

For industrial field, cost is one of the most important factors. Especially discrete devices like a fast recovery diodes which are produced by complicated processes. In case of over t defect, reworking is required to limit the cost which is increased. Owing to simple applied to finished products, electron beam irradiation is presented to rework them. This study have exposed the irradiation to finished fast diodes which high t (300-400 ns) and considered effects of irradiation on fast diodes after exposed. The result of experiment shows irradiation can reduce t after exposed depend on irradiation doses from average t 350ns to 100, 60, 50, 40 and 35ns, for irradiation dose 50, 100, 150, 200, 250 and 300kGy respectively. Notwithstanding fast diodes after exposed were degraded by irradiation. Forward voltage is added double at 50kGy and more in larger doses and reversed leakage current is also slightly increased but did not affect to breakdown voltage.