首页> 外文会议>International conference on computer design >Bandwidth-Aware Last-Level Caching: Efficiently Coordinating Off-Chip Read and Write Bandwidth
【24h】

Bandwidth-Aware Last-Level Caching: Efficiently Coordinating Off-Chip Read and Write Bandwidth

机译:带宽感知的最后一级缓存:有效地协调切片读写写入带宽

获取原文
获取外文期刊封面目录资料

摘要

The last two decades have witnessed a large number of proposals on the last-level cache (LLC) replacement policy aiming to minimize the number of LLC read misses. Another independent large body of work has explored mechanisms to address the inefficiencies arising from the DRAM writes introduced by the LLC replacement policy. These DRAM scheduling proposals, however, leave the LLC replacement policy unchanged and, as a result, miss the opportunity of synergistically shaping and scheduling the DRAM write bandwidth demand. In this paper, we argue that DRAM read and write bandwidth demands must be coordinated carefully from the LLC side and hence, introduce bandwidth-awareness in the LLC policy. Our bandwidth-aware LLC policy proposal enables long uninterrupted stretches of DRAM reads while maintaining the efficiency of the last-level cache and controlling precisely when and for how long writes can demand DRAM bandwidth. Our proposal comfortably outperforms the state-of-the-art eager DRAM write scheduling proposals and bridges 75% of the performance gap between the baseline and a hypothetical system that deploys an unbounded DRAM write buffer.
机译:过去二十年目睹了最后一级缓存(LLC)替换政策的大量建议,旨在最大限度地减少LLC读取未命中的数量。另一个独立的大型工作已经探索了解决LLC替代政策所引入的DRAM写入所产生的效率的机制。然而,这些DRAM调度提案将LLC替换政策保持不变,因此错过了协同塑造和调度DRAM写入带宽需求的机会。在本文中,我们认为,必须从LLC方面仔细协调DRAM读写需求,从而在LLC策略中引入带宽感知。我们的带宽感知LLC策略提议支持长期不间断的DRAM读数,同时保持最后级别缓存的效率,并准确地控制写入何时何地控制DRAM带宽。我们的提案舒适地优于最先进的渴望DRAM写入调度提案,并桥接基线与一个假设系统之间的性能差距的75%,该系统部署了一个无限的DRAM写缓冲区。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号