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A Sub-1 ppm/°C CMOS Bandgap Voltage Reference With Process Tolerant Piecewise Second-Order Curvature Compensation

机译:一种具有工艺容错分段二阶曲率补偿的亚1ppm/°C CMOS带隙基准电压源

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This paper presents a CMOS high-precision bandgap voltage reference. To obtain low temperature coefficient (TC) regardless of process variation, piecewise second-order curvature compensation method is proposed. Curvature compensation current is generated through current subtraction and current squaring operation with two currents with different dependence on temperature. Also, several circuit techniques are adopted to achieve compensate error sources. Chopping technique is utilized to cancel 1/f noise and DC offset of the error amplifier. Trimming resistor is used to compensate process variation. The bandgap reference is designed in a 0.13µm CMOS process. Post layout simulation shows that TC of the bandgap reference is 0.64ppm/°C over a wide temperature range of -40°C to 125°C. Moreover, sub-1 ppm/°C TC is achieved irrespective of process variation after two-point temperature trimming. The bandgap reference consumes 44µA at 27°C and layout size is 0.0534mm2.
机译:介绍了一种CMOS高精度带隙基准电压源。为了在不考虑工艺变化的情况下获得低温系数(TC),提出了分段二阶曲率补偿方法。曲率补偿电流通过电流减法和电流平方运算产生,两个电流对温度的依赖性不同。此外,还采用了多种电路技术来实现误差源的补偿。利用斩波技术消除误差放大器的1/f噪声和直流偏移。微调电阻器用于补偿工艺变化。带隙基准采用0.13µm CMOS工艺设计。布局后模拟显示,在-40°C至125°C的宽温度范围内,带隙基准的TC为0.64ppm/°C。此外,无论两点温度微调后的工艺变化如何,都可以实现低于1 ppm/°C的TC。带隙基准在27°C时消耗44µA,布局尺寸为0.0534mm

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