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A 2-transistor sub-1V low power temperature compensated CMOS voltage reference

机译:2晶体管低于1V的低功耗温度补偿CMOS电压基准

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This paper presents the design of a CMOS sub-1V voltage reference using a 2-transistor Self-Cascode MOSFET structure able to get low power consumption, temperature compensation, and small area. An efficient design procedure applied to this simple topology relying on NMOS transistors with different threshold voltages allows attaining large immunity against bias current and supply voltage variations. Besides that, the two transistors can operate in weak, moderate, or strong inversion making the design flexible in terms of area and power consumption. Implemented in a 0.18?m standard CMOS technology, the circuit provides a 400mV voltage reference with a variation of ±0.18% from −20°C to 75°C (or less than 15ppm/°C), operates from 3.6V down to 800mV while biased with a 5nA resistor-less PTAT current source that varies ±30% over PVT, and consumes less than 20nA. The complete circuit including the current source and the 2-transistor Self-Cascode MOSFET occupies an area of 0.01mm.
机译:本文介绍了采用2晶体管自级联MOSFET结构的CMOS低于1V电压基准的设计,该结构能够实现低功耗,温度补偿和小面积化。依靠具有不同阈值电压的NMOS晶体管,将有效的设计程序应用于这种简单的拓扑结构,可以获得较大的抗偏置电流和电源电压变化的能力。除此之外,两个晶体管可以在弱,中或强反转状态下工作,从而使设计在面积和功耗方面具有灵活性。该电路采用0.18?m标准CMOS技术实现,可提供400mV的电压基准,其温度范围为−20°C至75°C(或小于15ppm /°C),变化范围为±0.18%,工作电压范围为3.6V至800mV。偏置电压为5nA的无电阻PTAT电流源,在整个PVT范围内变化±30%,消耗的电流小于20nA。包括电流源和2晶体管自级联MOSFET的完整电路占用0.01mm的面积。

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