Benefit of combining metrology techniques for thin SiGe:B layers

摘要

This paper presents a study performed to evaluate the benefits of combining techniques to improve the overall metrology of thin Silicon Germanium (SiGe) epitaxial layers doped with Boron. A specifically-designed set of wafers was processed and measured by different in-line metrology tools and characterization techniques. This study describes the best strategy for combining metrology techniques in order to reliably determine dopant concentration and Ge composition measurement of the layers. It demonstrates that combined metrology enables key improvements in manufacturing and engineering environments.