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Requirements for Lithography and Mask Technology from the Standpoint of the System LSI Business

机译:从系统LSI业务的角度来看,光刻和掩模技术的要求

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The SLI business embraces inherent problems in relationt o silicon proces and design implementation. As the technology becomes more complex and geometries become smaller, shortening TAT and reducing costs become vever more urgent and significant tasks. Efforts are currently being made, particularly in the field of compilable total solutions, to shorten TAT and to re-use modules so as to reduce costs. in the trend towards smaller geometries, TAT and costs related to the mask process (including MDP) are becoming significant factors. It is necessary to optimize the entire process from design to MDP (including OPC and PSM), mask-making and lithography and thereby improve pattern precision, reduce EB writer shots, achieve greater mask latitude and identify true defects. It will also be necessary to re-use the lithography model during MDP and to use a consistent data hierarchy and a consistent data format.
机译:SLI业务拥有关系o硅Proces和设计实现中的内在问题。由于该技术变得更复杂,几何形状变小,缩短TAT并降低成本变得更加紧迫和重要的任务。目前正在努力,特别是在可编译的全解决方案领域,缩短TAT并重新使用模块,以降低成本。在较小的几何形状的趋势中,与掩模过程(包括MDP)相关的TAT和成本正成为重要因素。有必要优化从设计到MDP(包括OPC和PSM),掩模制作和光刻的整个过程,从而提高图案精度,减少EB Writer镜头,实现更大的面罩纬度并识别真正的缺陷。还必须在MDP期间重新使用光刻模型,并使用一致的数据层次结构和一致的数据格式。

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