cooling; flip-chip devices; logic gates; power MOSFET; semiconductor device models; semiconductor device reliability; silicon compounds; wide band gap semiconductors; DBC substrate; SiC; TIM; bottom surface; copper clip attach; developed functional test vehicles; device junction temperature; double-side cooling design; double-side cooling structure; drain interconnection; electrical modeling; encapsulation; flat structure; flipchip bonding; gate bonding; high-power 3-phase inverter module; high-power heat dissipation; high-power silicon carbide inverter module packaging solutions; high-temperature endurable material set; high-temperature interconnection; junction temperature; mechanical modeling;
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