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Patterned photochemical deposition on domain engineered ferroelectric single crystals

机译:域工程铁电单晶上的图案化光化学沉积

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The photochemical deposition of silver on (001)-oriented 0.25Pb(In1/2Nb1/2)O3-0.44Pb(Mg1/3Nb2/3)O3-0.31PbTiO3 (PIN-PMN-PT) ferroelectric single crystals is investigated via piezoresponse force microscopy (PFM) and Kelvin probe force microscopy (KPFM). Selective photochemical deposition within c+ domains is attained by manipulating the photoreaction time. Enhanced photochemical reduction at c−/c+ domain boundaries is achieved by controlling the domain poling voltage and the scanning direction of the tip during domain switching. These phenomena are explained by polarisation band bending at domain boundaries and tip induced charge injection during domain switching. This work provides insight into obtaining an arbitrary spatial distribution of photodeposited metal on ferroelectric materials.
机译:通过压电响应力研究了银在(001)取向0.25Pb(In1 / 2Nb1 / 2)O3-0.44Pb(Mg1 / 3Nb2 / 3)O3-0.31PbTiO3(PIN-PMN-PT)铁电单晶上的光化学沉积显微镜(PFM)和开尔文探针力显微镜(KPFM)。通过控制光反应时间,可以在c +域内实现选择性光化学沉积。在c- / c +域边界处增强的光化学还原是通过在域切换过程中控制域极化电压和尖端的扫描方向来实现的。这些现象可以通过在畴边界处的极化带弯曲和畴切换过程中的尖端感应电荷注入来解释。这项工作为获得铁电材料上光沉积金属的任意空间分布提供了见识。

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