Control of domain configurations and sizes in crystallographically engineered ferroelectric single crystals: Phase field modeling

摘要

Computer simulation is performed to study the mechanisms for controlling domain configurationsnand sizes in crystallographically engineered ferroelectric crystals. It is found that minimal domainnsizes and highest domain wall densities are obtained with intermediate electric field applied alongnnonpolar axis of ferroelectric crystals, while lower and higher fields produce coarser domains, andntemperature also plays important role in domain size control. The simulation shows that selection ofnpolar domain variants by external electric field during nucleation stage of ferroelectric phasentransition significantly affects subsequent domain growth and evolution kinetics, controlling thenformation and sizes of lamellar domains. © 2010 American Institute of Physics.nu0004doi:10.1063/1.3501139