Control of domain configurations and sizes in crystallographically engineered ferroelectric single crystals: Phase field modeling

摘要

Computer simulation is performed to study the mechanisms for controlling domain configurations and sizes in crystallographically engineered ferroelectric crystals. It is found that minimal domain sizes and highest domain wall densities are obtained with intermediate electric field applied along nonpolar axis of ferroelectric crystals, while lower and higher fields produce coarser domains, and temperature also plays important role in domain size control. The simulation shows that selection of polar domain variants by external electric field during nucleation stage of ferroelectric phase transition significantly affects subsequent domain growth and evolution kinetics, controlling the formation and sizes of lamellar domains.