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Dynamic and long-time tests of the transverse piezoelectric coefficient in PZT thin films

机译:PZT薄膜中横向压电系数的动态和长期测试

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A set up originally designed for e31f measurements of piezoelectric thin films was operated in a way to assess life time issues with simultaneous recording of polarization change, PV-loop integral, and piezoelectric beam deflection. A 1μm thick PZT 53/47 thin film was subjected to 109 unipolar pulses with 150 kV/cm driving voltage at 100 kHz and 50 % duty cycle. The observed fatigue was restricted to polarization change and leakage, and did not show up in the deflection. The ferroelectric loop recovered in a few minutes after stopping the voltage pulses. Further analysis suggests a heating of the element by the dissipated energy of the PV loop integral, becoming worse when leakage increases at higher temperatures. The critical piezoelectric stress was reasonably close to values derived from toughness coefficients of bulk PZT ceramics and for crack lengths corresponding to the film thickness.
机译:最初设计用于e31f压电薄膜测量的装置可以评估寿命问题,同时记录极化变化,PV回路积分和压电束偏转。在100 kHz和50%占空比下,以150 kV / cm的驱动电压对109μm厚的1μmPZT 53/47薄膜施加109个单极脉冲。观察到的疲劳仅限于极化变化和泄漏,并且没有出现在挠度中。停止电压脉冲后,铁电回路在几分钟后恢复。进一步的分析表明,PV回路积分的耗散能量会加热元件,在较高温度下泄漏增加时会变得更糟。临界压电应力合理地接近于从块状PZT陶瓷的韧性系数得出的值,并且裂纹长度对应于薄膜厚度。

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