The influence of n-type silicon piezoresistors pre-strain state on their piezoresistance

摘要

Theory of n-type silicon longitudinal and transverse piezoresistance coefficients in the case of uniaxial pre-strain state along [100] crystallographic axis is presented. Numerical calculations for various impurity concentrations in a range of 1·10 - 1·10 cm are performed. It has been shown that compressive pre-strain state of the piezoresistor can increase the longitudinal piezoresistance coefficient on 60 %.