METHOD OF MANUFACTURING n-TYPE SILICON SINGLE CRYSTAL INGOT, METHOD OF MANUFACTURING n-TYPE SILICON WAFER, AND n-TYPE SILICON WAFER

摘要

To provide a method of manufacturing an n-type silicon single crystal in which variance in in-plane resistance of an n-type silicon wafer whose plane orientation is (111) can be suppressed and the n-type silicon wafer can be obtained in a high yield.SOLUTION: A method of manufacturing an n-type silicon single crystal ingot comprises a lifting process of an n-type silicon single crystal ingot 6 whose crystal orientation is 111 from a dopant added melt 41 prepared by adding a dopant to a silicon melt by a Czochralski method in which a magnetic field is not applied, the n-type silicon single crystal ingot 6 being lifted in the lifting process so that a solid-liquid boundary surface S between the n-type silicon single crystal ingot 6 being lifted and the dopant-added melt 41 is downward convex. The lifting process includes lifting the n-type silicon single crystal ingot 6 at a lifting rate of 0.35-0.45 m/min so that the solid-liquid boundary surface between the n-type silicon single crystal ingot 6 being lifted and the dopant-added melt 4 is downward convex.SELECTED DRAWING: Figure 2