Method for manufacturing n-type silicon single crystal, n-type silicon single crystal ingot, silicon wafer, and epitaxial silicon wafer

摘要

The method for producing an n-type silicon single crystal in which the silicon single crystal 10 is pulled up and grown by the Czochralski method from the silicon melt 9 containing red phosphorus as a main dopant, with respect to the linear diameter of the silicon single crystal 10, The silicon single crystal 10 having an electrical resistivity of 0.5 mΩcm or more and 1.0 mΩcm or less is pulled up using a quartz crucible 3A having an inner diameter of 1.7 times or more and 2.3 times or less.