N-TYPE SILICON SINGLE CRYSTAL INGOT MANUFACTURING METHOD, N-TYPE SILICON WAFER MANUFACTURING METHOD, AND N-TYPE SILICON WAFER

摘要

PROBLEM TO BE SOLVED: To provide an n-type silicon single crystal ingot manufacturing method capable of suppressing the dispersion of an in-plane resistance of an n-type silicon wafer having a plane direction of (111) plane, and acquiring such an n-type silicon wafer in a high production yield.SOLUTION: An n-type silicon single crystal ingot manufacturing method comprises: a pulling-up step of pulling up an n-type silicon single crystal ingot 6 of a crystal orientation 111 from a dopant added solution 41 having a dopant added to a silicon solution by the Czochralski method. At the pulling-up step, the n-type silicon single crystal ingot 6 is pulled up so that the solid-liquid inter-plane S may take a downward bulging shape with the n-type silicon single crystal ingot 6 being pulled up and the dopant-added solution 41.SELECTED DRAWING: Figure 2