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Influence of nonequilibrium temperature and charge carriers on the Ohm's law in a bipolar semiconductor

机译:非平衡温度和载流子对双极半导体中欧姆定律的影响

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The linear electrical conductivity of a bipolar semiconductor which is connected to a metal from both sides is investigated in general case, i.e., when the influence of both nonequilibrium charge carriers (electrons and holes) and nonequilibrium temperature on transport of electrical charges is taken into account. Let us notice that the electrical and energy nonequilibriums arise automatically in a bipolar semiconductor when electrical current flows even in a linear approximation with respect to an electrical current. The expression for the electrical conductivity is obtained for a bipolar semiconductor which depends on the electrical conductivity of electrons and holes, the thermal conductivity, the bandgap, the lifetime of charge carriers, the surface recombination rate on a semiconductor-metal contact.
机译:通常情况下,即在考虑非平衡电荷载流子(电子和空穴)和非平衡温度对电荷传输的影响时,都研究了从两侧连接到金属的双极型半导体的线性电导率。 。让我们注意到,即使电流相对于电流线性近似地流动,在双极型半导体中也会自动产生电和能量不平衡。对于双极型半导体,可以获得电导率的表达式,该表达式取决于电子和空穴的电导率,热导率,带隙,电荷载流子的寿命,半导体-金属触点上的表面复合率。

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