Energy band diagram and charge distribution in AlGaN/GaN heterostructure studied by classical approach

摘要

We used a classical approach to calculate energy band diagrams of AlGaN/GaN heterostructures. This approach enables to calculate the band diagram and carrier concentrations also when the external bias is applied on the structure. Also the potential on the Schottky barrier is more rigorously defined as in a self-consistent solution of Poisson and Schrodinger equations. Dependence of the band profile and the carrier concentration of the two-dimensional gas on the piezoelectric charge can also be calculated by this approach.