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On-chip reference oscillators with process, supply voltage and temperature compensation

机译:片上参考振荡器,具有工艺,电源电压和温度补偿

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Here we present the design and implementation of a 130-MHz on-chip reference oscillator in a 0.18-µm 1-ploy 6-metal digital CMOS process. To compensate for the influences on the oscillation frequency by process, supply voltage and temperature (PVT) variations, the oscillator uses a bias adjustment technique without BJT devices, on-chip inductors or external components. Measurements of 8 samples in the 0 to 100°C temperature range indicate an average deviation of ±4.99% in the oscillation frequency. The process-induced frequency deviation is ±1.13% across chips at room temperature. The deviation of frequency with 10% supply voltage variation is within ±5.4%.
机译:在这里,我们在0.18-μm1-ploy 6-mear数字CMOS工艺中介绍了130 MHz片上参考振荡器的设计和实现。为了通过过程补偿对振荡频率的影响,电源电压和温度(PVT)变化,振荡器使用没有BJT器件,片上电感器或外部元件的偏置调整技术。 0至100℃的8个样品的测量值表示振荡频率的平均偏差为±4.99%。在室温下,过程感应频率偏差为碎片±1.13%。频率10%电源电压变化的偏差在±5.4%范围内。

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