Low Dit optimized Interfacial Layer using High-Density Plasma Oxidation and Nitridation in Germanium High-?? Gate stack

摘要

Low Dit interfacial GeOx, and GeOxNy are grown on Germanium using high density slot plane antenna (SPA) plasma oxidation and nitridation respectively. Excellent MOS characteristics are demonstrated for the Ge high-?? gate stack with interfacial GeOx, and GeOxNy. GeOx interfacial layer significantly reduced interface state density (Dit) to as low as 3??1011 cm-2 eV-1.