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Low temperature method of forming a gate stack with a high k layer deposited over an interfacial oxide layer
Low temperature method of forming a gate stack with a high k layer deposited over an interfacial oxide layer
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机译:形成具有沉积在界面氧化物层上的高k层的栅极堆叠的低温方法
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摘要
The present invention relates to methods for forming dielectric layers on a substrate, such as in an integrated circuit. In one aspect of the invention, a thin interfacial layer is formed. The interfacial layer is preferably an oxide layer and a high-k material is preferably deposited on the interfacial layer by a process that does not cause substantial further growth of the interfacial layer. For example, water vapor may be used as an oxidant source during high-k deposition at less than or equal to about 300 C.
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