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Can we engineer current saturation in narrow gap graphitic FETs without hurting mobility?

机译:我们可以在不影响迁移率的情况下在窄间隙石墨FET中设计电流饱和吗?

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While a wide bandgap material with poor mobility can saturate the output current, we demonstrate a way to achieve clear current saturation in the output characteristics using narrow-bandgap, high mobility graphitic-channels(Fig.4b, 4c) without hurting the mobility. Using gate engineering alone, we preserve the intrinsic narrow bandgap but locally cascade them along the channel. This filters intermediate conduction and valence bands and widens the gap in the tranmission (Fig.3) without sacrificing mobility. A widen transmission gap delays the onset of band-to-band tunneling, which normally plagues devices with a narrow bandgap channel. Results are verified using an optimized fully atomistic non-equilibrium Green's Function(NEGF) solver with complex 3-D Poisson1. A graphitic channel is used as a template but is one of many possible narrow-bandgap materials with high mobility. Without hurting mobility, the improved current saturation is expected to enhance gain for radio frequency(RF) and potentially digital switching applications by significantly decreasing output conductance(gds)2.
机译:虽然具有较差迁移率的宽带隙材料可以使输出电流饱和,但我们展示了一种使用窄带隙,高迁移率石墨通道(图4b,4c)在输出特性中实现清晰电流饱和的方法,而不会损害迁移率。单独使用栅极工程,我们保留了固有的窄带隙,但沿通道将它们局部级联。这过滤了中间的导带和价带,并在不牺牲迁移率的情况下加宽了传输间隙(图3)。传输间隙变大会延迟带间隧道的出现,这通常会困扰带隙通道较窄的设备。使用优化的具有复杂3-D Poisson 1 的完全原子非平衡格林函数(NEGF)求解器验证了结果。石墨通道用作模板,但它是许多可能的具有高迁移率的窄带隙材料之一。在不损害移动性的情况下,改善的电流饱和度有望通过显着降低输出电导(g ds 2 来提高射频(RF)和潜在数字开关应用的增益。

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