首页> 外国专利> Band-gap reference current source with compensation for saturation current spread of bipolar transistors

Band-gap reference current source with compensation for saturation current spread of bipolar transistors

机译:带隙基准电流源,可补偿双极晶体管的饱和电流散布

摘要

A reference current source for generating a reference current (Irf) includes a bipolar first transistor (2) and a bipolar second transistor (4), the base of the first transistor (2) being coupled to the base of the second transistor (4), a first resistor (6) connected between the emitter of the first transistor (2) and the emitter of the second transistor (4), and a second resistor (8) connected between the emitter of the second transistor (4) and a supply terminal (10). The current source also includes a measurement circuit (16) having inputs (12, 14) coupled to the collector of the first transistor (2) and the collector of the second transistor (4), and having a measurement output (18) for supplying a measurement signal in response to a difference in the collector current of the first transistor (2) and the second transistor (4), a bipolar third transistor (28) having its base coupled to the measurement output (18), having its emitter coupled to the bases of the first (2) and the second transistor, and having a collector supplying the reference current (Irf), and a bipolar fourth transistor (34) having its base coupled to the base of the third transistor (28), and having its emitter connected to the emitter of the third transistor (28) via a base pinch resistor (36). The base pinch resistor (36) provides compensation for variations in the reference current (Irf) caused by spread in the saturation current of the bipolar transistors.
机译:用于产生参考电流(Irf)的参考电流源包括双极第一晶体管(2)和双极第二晶体管(4),第一晶体管(2)的基极耦合到第二晶体管(4)的基极。 ,连接在第一晶体管(2)的发射极和第二晶体管(4)的发射极之间的第一电阻器(6),以及连接在第二晶体管(4)的发射极和电源之间的第二电阻器(8)。终端(10)。电流源还包括测量电路(16),其具有耦合到第一晶体管(2)的集电极和第二晶体管(4)的集电极的输入(12、14),并具有用于提供的测量输出(18)。响应于第一晶体管(2)和第二晶体管(4)的集电极电流之差的测量信号,双极第三晶体管(28)的基极耦合到测量输出(18),其发射极耦合到第一(2)和第二晶体管的基极,并具有提供参考电流(Irf)的集电极,和双极第四晶体管(34),其基极耦合到第三晶体管(28)的基极,以及其发射极通过基极压紧电阻(36)连接到第三晶体管(28)的发射极。基极压紧电阻器(36)补偿由双极晶体管的饱和电流的扩展引起的参考电流(Irf)的变化。

著录项

  • 公开/公告号US5581174A

    专利类型

  • 公开/公告日1996-12-03

    原文格式PDF

  • 申请/专利权人 U.S. PHILIPS CORPORATION;

    申请/专利号US19940349112

  • 发明设计人 ROBERT J. FRONEN;

    申请日1994-12-02

  • 分类号G05F3/16;G05F3/20;

  • 国家 US

  • 入库时间 2022-08-22 03:10:59

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号