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Direct multichip-to-wafer 3D integration technology using flip-chip self-assembly of NCF-covered known good dies

机译:使用NCF覆盖的已知良好模具的倒装芯片自组装直接多芯片到晶圆3D集成技术

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We demonstrated surface tension-driven self-assembly and microbump bonding using NCF (non-conductive film)-covered chips with Cu/Sn-Ag microbumps for highthroughput and high-yield direct multichip-to-wafer 3D integration. The NCF is a promising candidate to completely fill gaps between fine-pitch microbumps, and is essential for realizing highly-reliable microbump-to-microbump interconnections. Here, by applying the self-assembly method with strong water surface tension, the NCF-covered chips were precisely aligned to hydrophilic assembly sites defined on host Si substrates in a face-down manner with alignment accuracies of approximately 1 μm. The self-assembled chips having Cu/Sn-Ag microbumps covered with NCF were thermally compressed to obtain electrical joints between the chips and substrate after the self-assembly process. The resulting daisy chains showed good electrical characteristics with contact resistance of 53 mΩ/joint.
机译:我们使用NCF(非导电膜) - Cu / Sn-Ag Microbumps用于淬火,高产直接多芯片3D集成,证明了表面张力驱动的自组装和微磁盘键合。 NCF是一个有前途的候选者,可以在细场微磁盘之间完全填充间隙,并且对于实现高度可靠的Microbump-to-Microbump互连是必不可少的。这里,通过施加具有强水表面张力的自组装方法,NCF覆盖的芯片精确地对准在宿主Si基板上以面向上的方式定义的亲水组装位点,其对准精度约为1μm。具有NCF覆盖的Cu / Sn-Ag Microbumps的自组装芯片被热压缩,以在自组装过程之后获得芯片和基板之间的电接头。由此产生的雏菊链显示出良好的电气特性,接触电阻为53mΩ/接头。

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