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Integrating silicon photonics and laser dies using flip-chip technology

机译:使用倒装芯片技术集成硅光子学和激光管芯

摘要

An optoelectronic device includes an optoelectronic die, a laser die, and electrical interconnects. The optoelectronic device has a surface. A trench having first and second walls and a floor is formed in the surface, and an electrically conductive layer extends from the floor, via the first wall, to the surface. The laser die includes first and second electrodes and a laser output aperture. The laser die is mounted in the trench and is configured to emit a laser beam. The first electrode is coupled to the electrically conductive layer and the laser output aperture is mechanically aligned with a waveguide that extends from the second wall. The interconnects are formed on the second electrode of the laser die and on selected locations on the surface of the optoelectronic die. The interconnects are coupled to a substrate, and are configured to conduct electrical signals between the optoelectronic die and the substrate.
机译:光电器件包括光电管芯,激光管芯和电互连。光电器件具有表面。在表面上形成具有第一和第二壁以及底部的沟槽,并且导电层通过第一壁从底部延伸到表面。激光管芯包括第一和第二电极以及激光输出孔。激光管芯被安装在沟槽中并且被配置为发射激光束。第一电极耦合到导电层,并且激光输出孔与从第二壁延伸的波导机械对准。互连件形成在激光管芯的第二电极上以及光电管芯表面上的选定位置上。互连件耦合到衬底,并且被配置为在光电管芯和衬底之间传导电信号。

著录项

  • 公开/公告号US10295740B2

    专利类型

  • 公开/公告日2019-05-21

    原文格式PDF

  • 申请/专利权人 MELLANOX TECHNOLOGIES LTD.;

    申请/专利号US201715633799

  • 发明设计人 IDO BOURSTEIN;SYLVIE ROCKMAN;

    申请日2017-06-27

  • 分类号G02B6/122;H01S5/022;H01S5/024;G02B6/42;H01S5/042;G02B6/12;H01S5/40;

  • 国家 US

  • 入库时间 2022-08-21 12:14:58

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