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A High Performance Package with Fine-Pitch RDL Quality Management

机译:具有细距RDL质量管理的高性能封装

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In this research, a good solution to achieve high quality fine-pitch Re-Distribution Layer (RDL) has been demonstrated by controlling bottom Radio Frequency (RF) power of plasma treatment on Polyimide (PI). The experimental results shows both overly large RDL undercut and interfacial void defect are caused on a rough PI surface. A lower bottom RF power treatment is able to carry out a smooth PI surface. This process solves fine-pitch RDL delamination issue, and RDL undercut can be mitigated to an acceptable level. Most important of all, interfacial void defect between PI and RDL is eliminated on smooth PI surface. Moreover, a model has been established about a mechanism of surface roughness affecting interfacial void and RDL undercut. The model also verifies the optimal PI surface properties for fine-pitch RDL. Finally, this enhancement solution for fine-pitch RDL has been successfully implemented on high performance package e.g. Fan-Out Chip on Substrate (FOCoS) proposed by ASE group [1]–[3].
机译:在该研究中,通过控制聚酰亚胺(PI)上等离子体处理的底部射频(RF)功率来证明了实现高质量细距重配层(RDL)的良好解决方案。实验结果表明过度大的RDL底切和界面空隙缺陷是在粗糙的PI表面上引起的。较低的底部RF功率处理能够进行光滑的PI表面。该过程解决了微调RDL分层问题,并且可以减轻RDL底切以可接受的水平。在平滑的PI表面上消除了PI和RDL之间的最重要的,在平滑的PI表面上消除了界面空隙缺陷。此外,已经确定了影响界面空隙和RDL底切的表面粗糙度机制的模型。该模型还验证了微距RDL的最佳PI表面属性。最后,在高性能封装中成功地实现了用于微距RDL的这种增强解决方案。 ASE组提出的衬底(Focos)上的扇出芯片[1] - [3]。

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