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Lithography at 14nm and beyond: Choices and challenges

机译:14nm及以后的光刻:选择和挑战

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As the gap between the lithography wavelength and critical feature size has continued to increase, the semiconductor industry has had to adjust. Previously, scaling along Moore's Law had relied on improvement in lithography equipment, occasionally by reducing the wavelength and frequently by improving the effective numerical aperture. The wavelength used to define critical dimensions during much of the nineties was 248nm, with the industry switching to 193nm in the following decade. After 157nm technology failed to materialize due to technological challenges, the focus of next generation lithography (NGL) research shifted to EUV. Meanwhile, 193nm continued to be the workhorse for the continuation of Moore's Law. The next big equipment advancement came with immersion steppers, which “increased” the effective aperture of the lens, thereby capturing more of the diffraction orders in the imaging process. Moore's Law, however requires a significant innovation every two years! With optical lithography wavelength and effective lens aperture stretched to these limits, double patterning came to the rescue. By splitting the pattern into two, the burden on each mask was somewhat reduced, allowing a “stitched” pattern to scale. All through these changes, continued scaling also required a tighter co-optimization between process and design. As the image quality became generally weaker, greater restrictions were placed on the diversity of features that could be robustly patterned, leading to the proverbial increase in the heft of design rule manuals. All through these heroic efforts to continue Moore's Law, in order to reap the resulting benefits to the electronics industry, a relatively new field called Computational Lithography has been providing a helping hand. Computational Lithography comprises a broad set of techniques that use physics-based calculations to eke out greater lithographic performance from a given generation of steppers. This - - fertile field has recently introduced two advanced features: inverse lithography, and source-mask optimization. Such techniques have helped extend the life of optical lithography beyond previously forecast durations. At the same time, as other lithography technologies become more mature, much of the computational infrastructure developed to extend optical lithography will likely be used to optimize the newer technologies. This paper will provide some examples of how Computational Lithography is creating novel and affordable solutions to sustain the scaling trend
机译:随着光刻波长和关键特征尺寸之间的间隙继续增加,半导体工业必须调整。此前,沿摩的法律缩放概述了偶尔通过改善有效数值孔径来减小波长和经常改善光刻设备。用于在大部分九十年代中定义关键尺寸的波长为248nm,在以下十年内开展工业转换为193nm。 157nm技术由于技术挑战而未能实现,下一代光刻(NGL)研究的重点转移到EUV。与此同时,193纳姆继续成为摩尔定律延续的主教。下一个大型设备进步来自沉浸式地下室,哪个“增加”透镜的有效孔径,从而捕获成像过程中的更多衍射令。然而,摩尔定律,每两年都需要大量创新!使用光学光刻波长和有效镜头孔伸展到这些限制,双重图案来到救援。通过将图案分成两个,每个面具的负担有点减少,允许A“缝合”模式以规模。通过这些变化,持续的缩放也需要在过程和设计之间进行更严格的共同优化。随着图像质量一般变得较弱,更大的限制就会对可能具有强大模式的功能的多样性,导致众所周知的设计规则手册。通过这些英勇的努力继续摩尔定法律,为了获得对电子行业产生的益处,一个名为计算光刻的一个相对较新的领域一直在提供帮助的手。计算光刻包括广泛的技术,该技术使用基于物理学的计算来从给定的步骤从给定的步骤产生更大的光刻性能。此 - 肥沃的字段最近推出了两个高级功能:逆光刻和源掩模优化。这种技术有助于延长超出先前预测持续时间的光学光刻的寿命。与此同时,随着其他光刻技术变得更加成熟,大部分用于延伸光学光刻的计算基础设施可能会用于优化新技术。本文将提供一些计算光刻如何创建新颖的和经济实惠的解决方案来维持缩放趋势

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