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Effects of the preparation conditions and furnace annealing on the structure and morphology of Zn0.8Cd0.2Se thin films

机译:制备条件和炉内退火对Zn0.8Cd0.2Se薄膜结构和形貌的影响

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Single layers of Zn0.8Cd0.2Se were prepared by thermal vacuum evaporation at room substrate temperature. Two groups of samples with the same composition were produced by applying consecutive deposition of ZnSe and CdSe sublayers with nominal thickness of 0.12 and 0.37 or 0.08 and 0.23 nm, respectively. Atomic Force Microscopy (AFM), Scanning Electon Microscopy (SEM) and X-ray diffraction (XRD) measurements were performed to explore the evolution of the crystal structure, microstructure, composition and surface morphology with the change of preparation conditions and upon furnace annealing of Zn0.8Cd0.2Se thin films (400nm) with various sublayer thickness at 673 K in an inert atmosphere. It has been found that as-deposited films were nanocrystalline with a grain size less than or around 5 nm and cubic structure. The variation of the sublayer thickness does not appreciably affect the film crystal structure and composition. Upon annealing the cubic structure is preserved, the average nanocrystals size increased and root mean square roughness strongly decreases.
机译:通过在室温衬底温度下热真空蒸发来制备单层Zn0.8Cd0.2Se。通过连续沉积标称厚度分别为0.12和0.37或0.08和0.23 nm的ZnSe和CdSe子层,可以生产出具有相同成分的两组样品。进行了原子力显微镜(AFM),电子扫描显微镜(SEM)和X射线衍射(XRD)测量,以探讨随着制备条件的变化以及在炉内退火后晶体结构,微观结构,组成和表面形态的演变。在惰性气氛下在673 K下具有各种亚层厚度的Zn0.8Cd0.2Se薄膜(400nm)。已经发现,所沉积的膜是纳米晶体,其晶粒尺寸小于或等于5nm并且是立方结构。子层厚度的变化不会明显影响膜的晶体结构和组成。退火后,立方结构得以保留,平均纳米晶体尺寸增加,均方根粗糙度大大降低。

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