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Effects of the preparation conditions and furnace annealing on the structure and morphology of Zn0.8Cd0.2Se thin films

机译:制备条件和炉退火对ZN0.8CD0.2SE薄膜结构和形态的影响

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摘要

Single layers of Zn0.8Cd0.2Se were prepared by thermal vacuum evaporation at room substrate temperature. Two groups of samples with the same composition were produced by applying consecutive deposition of ZnSe and CdSe sublayers with nominal thickness of 0.12 and 0.37 or 0.08 and 0.23 nm, respectively. Atomic Force Microscopy (AFM), Scanning Electon Microscopy (SEM) and X-ray diffraction (XRD) measurements were performed to explore the evolution of the crystal structure, microstructure, composition and surface morphology with the change of preparation conditions and upon furnace annealing of Zn0.8Cd0.2Se thin films (400nm) with various sublayer thickness at 673 K in an inert atmosphere. It has been found that as-deposited films were nanocrystalline with a grain size less than or around 5 nm and cubic structure. The variation of the sublayer thickness does not appreciably affect the film crystal structure and composition. Upon annealing the cubic structure is preserved, the average nanocrystals size increased and root mean square roughness strongly decreases.
机译:通过在室内基质温度下热真空蒸发制备单层Zn0.8CD0.Se。通过将ZnSe和CdSe子层的连续沉积分别施加具有0.12和0.08或0.08和0.23nm的标称厚度的连续沉积来制备两组具有相同组合物的样品。原子力显微镜(AFM),扫描Electon显微镜(SEM)和X射线衍射进行(XRD)测量,以探索的晶体结构,微观结构,组合物和表面形态的演变与制备条件的变化以及在的炉内退火Zn0.8Cd0.2Se薄膜(400nm的)在惰性气氛中,在673K时的各种子层的厚度。已经发现,沉积的薄膜是谷粒尺寸小于或约5nm和立方结构的纳米晶体。子层厚度的变化不会显着影响膜晶体结构和组合物。在退火时保留立方结构,平均纳米晶体尺寸增加,根系平均粗糙度强烈降低。

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