A high temperature and low power SOI CMOS MEMS based thermal conductivity gas sensor

摘要

The design, 3D FEM modelling and measurement results of a novel high temperature, low power SOI CMOS MEMS thermal conductivity gas sensor are presented here. The sensor consists of a circular membrane with an embedded tungsten micro-heater. The high sensing capability is based on the temperature sensitivity of the resistive heating element. The sensor was fabricated at a commercial foundry using a 1 μm process and measures only 1×1 mm². The circular membrane has a 600 μm diameter while the heating element has a 320 μm diameter. Measurement results show that for a constant power consumption of 75 mW the heater temperature was 562.4 °C in air, 565.9 °C in N2, 592.5 °C for 1 % H2 in Ar and 599.5 °C in Ar.