CHARACTERIZATION OF PULSED-LASER-DEPOSITED AlN FILMS AS A GATE DIELECTRIC IN AlN-Si MIS STRUCTURES

摘要

MIS structures with AlN films deposited on p-Si substrates by pulsed laser deposition (PLD) were analyzed with respect to their capacitance-voltage and conductance-voltage characteristics, measured at different frequencies and temperatures of 77 and 300 K. The current-voltage characteristics were independent on temperature. It was shown that inter-trap tunneling could adequately account for the observed tunneling currents in these MIS structures.