High performance, large-area, 1600 V / 150 A, 4H-SiC DMOSFET for robust high-power and high-temperature applications

摘要

In this paper, we report our recently developed 2^nd Generation, large-area (56 mm² with an active conducting area of 40 mm²) 4H-SiC DMOSFET, which can reliably block 1600 V with very low leakage current under a gate-bias (VG) of 0 V at temperatures up to 200°C. The device also exhibits a low on-resistance (RON) of 12.4 mΩ at 150 A and VG of 20 V. DC and dynamic switching characteristics of the SiC DMOSFET have also been compared with a commercially available 1200 V/ 200 A rated Si trench gate IGBT. The switching energy of the SiC DMOSFET at 600 V input voltage bus is > 4X lower than that of the Si IGBT at room-temperature and > 7X lower at 150°C. A comprehensive study on intrinsic reliability of this 2^nd generation SiC MOSFET has been performed to build consumer confidence and to achieve broad market adoption of this disruptive power switch technology.