Improving MOSFETs radiation robustness by using the wave layout to boost analog ICs applications

摘要

This paper describes an experimental comparative study of the total ionizing dose (TID) effects between the Metal-Oxide-Semiconductor (MOS) Field Effect Transistors (MOSFET) manufactured with the Wave (S gate geometry) and the standard layouts (CnM). Because of the special characteristic of the bird's beaks regions of the Wave MOSFET (WnM), this innovative layout proposal for transistors is able to increase the devices TID hardness for analog integrated circuits (IC) applications in terms of the unity voltage gain frequency (f) without causing any additional cost to the Complementary MOS (CMOS) manufacturing process.