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Method for fabricating high-gain MOSFETs with asymmetric source/drain doping for analog and RF applications
Method for fabricating high-gain MOSFETs with asymmetric source/drain doping for analog and RF applications
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机译:用于模拟和RF应用的具有非对称源极/漏极掺杂的高增益MOSFET的制造方法
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摘要
A method of fabrication of an analog, asymmetric Metal-Oxide-Semiconductor-Field-Effect-Transistor (MOSFET) is provided. The method may comprise forming a first gate oriented in a first direction over an active region of a semiconductor substrate, forming a second gate extending perpendicular to the first gate over a second active region, using a dual-directional implant process to form a reduced-HALO doped area on a drain side of the first gate and also for a HALO doped area for the second gate, while the source side of the first gate is covered by a resist. Additionally, the method may comprise forming a HALO doped area on the source side of the first gate using a quad-directional implant process using the mask also used for HALO implants of other digital-logic devices on the substrate, while the drain side of the gate is blocked by a resist.
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