Computational Study on Schottky Barrier Height Extraction for Ballistic Nanotube Transistors

摘要

The engineering of contacts to semiconducting nanotubes still relies on minimizing the potential barrier for charge injection by carefully choosing the metal work function. Thus, precise barrier height extraction from current voltage curves of nanotube transistors is an essential characterization technique. Identifying the flat band voltage V_FB is a known recipe to determine the Schottky barrier height. In the present brief, we report on the challenges to correctly identify V_FB, when charge carriers cross a short transistor channel without loss of energy and are injected largely via tunneling.