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Comparative Analysis of Inference Errors in a Neural Network Implemented in SRAM-Based FPGA Induced by Neutron Irradiation and Fault Injection Methods

机译:中子辐照和故障注射方法诱导的基于SRAM的FPGA在基于SRAM的FPGA中的推理误差的比较分析

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In this paper we explore multiple and complementary approaches to analyze the single event upset susceptibility of a design implemented in Xilinx 28 nm SRAM-based FPGA. We choose as case study a neural network trained for a classification task. The techniques adopted are neutron irradiation, laser and emulated fault injection. These different techniques are complementary in the sense that they can be applied in different levels of the design integration, from the comprehensive but coarse reliability evaluation of the whole design, provided by the irradiation, to the fine grained and focused reliability investigation of individual modules or devices, provided by laser fault injection. Also, results from these different techniques can be compared allowing their use as crosschecking mechanisms.
机译:在本文中,我们探讨了多种和互补的方法来分析基于Xilinx 28 NM SRAM的FPGA中实施的设计的单一事件损伤易感性。我们选择案例研究一个针对分类任务培训的神经网络。采用的技术是中子辐射,激光和模拟故障注射。这些不同的技术是互补的,因为它们可以应用于不同层次的设计集成,从辐射提供的整个设计的综合但粗糙的可靠性评估,到各个模块的细粒度和聚焦的可靠性调查或由激光故障注入提供的设备。而且,可以比较来自这些不同技术的结果,允许其用作交叉检查机制。

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