Zinc oxide (ZnO) is a II-VI compound n-type semiconductor with a direct wide bandgap of 3.37eV and large exciton binding energy of 60meV. ZnO nanostructures are considered promising excellent field emission (FE) materials due to their high mechanical stability, high aspect ratio, and negative electron affinity in various vacuum environments [1-3]. Since different ZnO nanostructures shows different emission properties, many efforts have been carried out to find the optimal fabrication process. Among others, synthesis temperature is an important factor in the fabrication process of ZnO nanostructures. In this paper, we investigate the influence of synthesis temperature on the field emission properties of ZnO nanostructures.
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