The ability to modify samples and create structures at the 'nano' level (<100nm) is now a very well established science. However, the tools required to facilitate this technology are going through a constant evolution in order to keep up with the high demands of new applications. One such tool is the Dualbeam, which combines a field emission SEM column with a gallium source focussed ion beam (FIB) column. Previously used only in the semiconductor or 'Nano-electronics' industry, it is now a vital tool in creating, modifying, imaging and analysing structures at the nano scale. In fact Dualbeams systems are now used regularly in semiconductors, data-storage, research, industry and even biology. Having two beams offers tremendous advantages to the user. A SEM column is the ideal tool for sample inspection and for imaging at high resolution of specific features without the risk of sample damage. By aligning the SEM and FIB at a reference point the sample can be inspected non-destructively and a certain area of interest determined. Software patterns are used to control where and how the ion beam is scanning on the sample and therefore where material is being removed. The milled area can be imaged in real time by the electron beam while the milling is in progress. This 'Simultaneous Patterning and Imaging' can be very useful to carefully control the milling process, using the ion beam only for material removal and the electron beam for non-destructive observation.
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