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Study of chemical reactions at metal-InP interfaces formed by sputter deposition of Pt and Ti

机译:PT和Ti溅射沉积形成的金属-INP界面的化学反应研究

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Interfacial reactions between [100] InP and thin films of Pt and Ti were studied. For the Pt/InP interface, an amorphous intermixing layer was formed during the sputter-deposition process even at room temperature. At the as-deposited Ti/InP contact, outdiffusion of In and a strong reaction between Ti and P were observed. Such a reaction process was further enhanced by rapid thermal annealing (RTA), resulting in the formation of an In/Ti-P/InP interfacial configuration.
机译:研究了PT和Ti的[100] InP和薄膜之间的界面反应。对于PT / INP界面,即使在室温下也形成了在溅射沉积过程中形成非晶混合层。在沉积的Ti / InP接触处,观察到uddiffusifus和Ti和P之间的强烈反应。通过快速热退火(RTA)进一步增强了这种反应过程,导致形成IN / Ti-P / InP界面构型。

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