InAs/sub x/P/sub 1-x/ V-groove quantum wires

摘要

For the first time we used the phosphorus/arsenic exchange reaction in InP V-grooves under arsine atmosphere to fabricate in-situ InAs/sub x/P/sub 1-x/ quantum wires by metal organic chemical vapor deposition (MOCVD) with emission at 1.163 eV. The advantage of this method is that no planarization of the groove tip occurs since no material is deposited during the exchange process. Details of As/P exchange on [001], [111]A, and [111]B surfaces and in the groove tip will be presented. Photoluminescence and spatially resolved cathodoluminescence are used to reveal the properties of the structures.